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| savantic semiconductor product specification silicon pnp power transistors bd250/a/b/c d escription with to-3pn package complement to type bd249/a/b/c 125 w at 25c case temperature 25 a continuous collector current pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit bd246 -55 bd246a -70 bd246b -90 v cbo collector-base voltage bd246c collector emitter -115 v bd246 -45 bd246a -60 bd246b -80 v ceo collector-emitter voltage bd246c open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -25 a i cm collector current-peak -40 a i b base current -5 a p c collector power dissipation t c =25 125 w t j junction temperature -65~150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors bd250/a/b/c c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit bd250 -45 BD250A -60 bd250b -80 v (br)ceo collector-emitter breakdown voltage bd250c i c =-30ma ;i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-15a ;i b =-1.5a -1.8 v v cesat-2 collector-emitter saturation voltage i c =-25a ;i b =-5a -4.0 v v be-1 base-emitter on voltage i c =-15a ; v ce =-4v -1.6 v v be-2 base-emitter on voltage i c =-25a ; v ce =-4v -3.0 v bd250/250a v ce =-30v i b =0 i ceo collector cut-off current bd250b/250c v ce =-60v i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1.5a ; v ce =-4v 25 h fe-2 dc current gain i c =-15a ; v ce =-4v 10 h fe-3 dc current gain i c =-25a ; v ce =-4v 5 switching times t on turn-on time 0.2 s t off turn-off time i c =-5a; i b1 =-i b2 =-0.5a r l =5 a 0.4 s savantic semiconductor product specification 3 silicon pnp power transistors bd250/a/b/c package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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